2016

,

Characterization of the Strain Relaxation Behavior of SiGe Epitaxial Layer by Dry Oxidation

2016

,

Consideration for effective NMOS contact resistivityreduction via INDA(interface N-type dopant accumulation)using TiSi2 with titanium/selenium double layer on in-situ doped Si:P film

2016

,

Effect of Selenium doping on the crystallization properties of GeSb for phase change memory applications

2016

,

Epitaxial Growth of The Si1-xGex Fin Structure and Its Strain Relaxation

2016

,

Improvement of Silicide Resistivity for nMOSFET using In-situ Heavily Doped Si:P Epitaxial Growth