발행물
컨퍼런스
International SiGe Technology and Device Meeting
2012
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The effect of gate length on channel strain of recessed source/drain Si1-xCx
The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si1-xGex
European Materials Research Society 2012 spring meeting
Strain evolution during the formation of erbium silicide on epi-Si1-xCx
Effects of Ge concentration on channel strain evolution during the silicidation of recessed source/drain Si1-xGex
the 10th Asia-Pacific Microscopy Conference
Channel strain measurement during the silicidation of recessed source/drain Si1-xGex by nano beam diffraction