발행물
컨퍼런스
2013 MRS Fall Meeting
2013
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Strain Characterization of Selectively Epitaxial Growon GaAs Structures in STI Patterned Si Substrate by Nano Beam Diffraction
한국현미경학회
Strain characteristics of FinFETs with SiGe stressors using nanobeam electron diffraction
17th International Conference on Crystal Growth and Epitaxy
Defect and Strain Analysis of Selective GaAs Epitaxy in STI Patterned Si (001) Substrate
2013년 대한금속·재료학회
In Situ Phosphorus-doped Polysilicon Layers using Trisilane and Phosphine
2013 반도체학술대회
Strain characterization of SiGe source/drain structures after annealing process by nano beam electron diffraction