발행물
컨퍼런스
European Materials Research Society
2011
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Study on interfacial reactions between atomic-layer-deposited HfO2 films and InP substrate using postnitridation with NH3 vapor
한국 물리학회 2011년 봄 학술논문발표회
Void formation in Ge2Sb2Te5 film
제18회 반도체학술대회
Effect of Tunnel Barrier Engineering on Resistance Switching Characteristics in HfO2 films
한국 물리학회2010 가을 발표대회
2010
The study of out-diffusion of In and P atoms of atomic-layer-deposited HfO2 film on n-InP(001)
Resistive Switching Characteristics of TiO2 with Controlling Defects at the Metal/oxide interface