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전체 논문

248

101

Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor
강유선, 김충의, 조만호, 안치홍, 김형섭, 서정혜, 김창수, 이태걸, 고대홍
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012

102

Characterization of channel strain evolution upon the silicidation of recessed source/drain Si(1-x)Ge(x) structures
김선욱, 유정호, 구상모, 고대홍, 이후정
APPLIED PHYSICS LETTERS, 2011

103

Reproducible resistance switching of defect-engineered NiOx with metallic Nb impurity
김종기, 나희도, 이성훈, 이규민, 유정호, 고대홍, 손현철
THIN SOLID FILMS, 2011

104

Enhanced Electrical Properties of SrTiO(3) Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
임찬중, Kim, SU (Kim, S. U.), 강유선, 조만호, 고대홍
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011

105

Defect states in epitaxial HfO2 films induced by atomic transport from n-GaAs (100) substrate
김충의, 정광식, 강유선, 조상완, 조만호, 정권범, 고대홍, 이연진, 김형섭
JOURNAL OF APPLIED PHYSICS, 2011

106

Effects of Nitrogen on Endurance of N-doped Ge2Sb2Te5 Films During Laser-Induced Reversible Switching
도기훈, 이도규, 고대홍, 손현철, 조만호
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011

107

Comparison of the Crystallization Behaviors in As-Deposited and Melt-Quenched N-Doped Ge2Sb2Te5 Thin Films
도기훈, 이도규, 배준현, 고대홍, 손현철, 조만호
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011

108

Achievement of a high channel strain via dry oxidation of recessed source/drain Si1-xGex structures
유정호, 김선욱, 구상모, 고대홍, 이후정
APPLIED PHYSICS LETTERS, 2011

109

Control of the Workfunction in Bilayer Metal Gate Stacks by Varying the First Layer Thickness
정은재, 이인근, 조만호, 고대홍
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011

110

The Phase Change Effect of Oxygen-Incorporation in GeSbTe Films
장문형, 박승종, 임동혁, 박성진, 조만호, 고대홍, 조성진
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011