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141
The dielectric characteristics and thermal stability of Hf-silicate films with different Si contents
이동원, 서동찬, 배연호, 김형섭, 조만호, 고대홍
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007
142
Growth kinetics of atomic layer deposited Hf silicate-like films using Hf[N (CH3) (C
Chung K.B., Cho M.-H., Moon D.W., Suh D.C., 고대홍, Hwang U., Kang H.J.
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007
143
A study on the thermal stabilities of the NiGe and Ni1-xTaxGe systems
Park, K, Lee, BH, Lee, D, 고대홍, Kwak, KH, Yang, CW, Kim, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007
144
Effects of N-2(+) ion implantation on phase transition in Ge2Sb2Te5 films
김영국, 백주혁, 조만호, Jeong, EJ, 고대홍
JOURNAL OF APPLIED PHYSICS, 2006
145
Change in phase separation and electronic structure of nitrided Hf-silicate films as a function of composition and post-nitridation anneal
조만호, 정권범, 고대홍
APPLIED PHYSICS LETTERS, 2006
146
Formation of a Ge-rich layer during the oxidation of strained Si1-xGex
Min, BG, Pae, YH, Jun, KS, 고대홍, Kim, H, 조만호, Lee, TW
JOURNAL OF APPLIED PHYSICS, 2006
147
Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment
Cho, MH, Chung, KB, Whang, CN, 고대홍, Lee, JH, Lee, NI
APPLIED PHYSICS LETTERS, 2006
148
Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures
김영국, Park, SA, 백주혁, Noh, MK, 정광호, 조만호, Park, HM, Lee, MK, Jeong, EJ, 고대홍, Shin, HJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006
149
Change in depth profile of N highly incorporated into SiO2 by plasma-assisted nitridation
조만호, Chung, KB, Kim, YK, Kim, DC, Heo, JH, Koo, BY, Shin, YK, Chung, UI, Moon, JT, 고대홍
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006
150
Structural and stoichiometric change in nitrided HfO2 grown on Ge(100) by atomic layer deposition
정권범, 황정남, 조만호, 고대홍
APPLIED PHYSICS LETTERS, 2006
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