발행물

전체 논문

248

131

Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature
Kim, CY, Cho, SW, 조만호, Chung, KB, Suh, DC, 고대홍, An, CH, Kim, H, Lee, HJ
Applied Physics Letters, 2009

132

Electronic and structural characteristics of Zr-incorporated Gd2O3 films on strained SiGe substrates
Baeck, JH, Park, SA, Lee, WJ, Jeong, IS, 정광호, 조만호, Kim, YK, Min, BG, 고대홍
Journal of Chemical Physics, 2009

133

Thermal stability of Ni-Pt-Ta alloy silicides on epi-Si1-xCx
Yoo, JH, Chang, HJ, Min, BG, 고대홍, 조만호, 손현철, Lee, TW
Materials Science And Engineering B-Advanced Functional Solid-State Materials, 2008

134

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate
김충의, 조상완, 조만호, 정권범, An, C.-H., Kim, H., Lee, H.J., 고대홍
Applied Physics Letters, 2008

135

Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry
조만호, 김충의, 문경순, 정권범, 임찬중, 고대홍, 손현철, 전형택
Journal of Chemical Physics, 2008

136

Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex
Min, BG, Yoo, JH, 손현철, 고대홍, 조만호, Lee, TW
Electrochemical and Solid State Letters, 2008

137

Investigation of phase transition of Ge2Sb2Te5 and N-incorporated Ge2Sb2Te5 films using x-ray absorption spectroscopy
김영국, 장문형, 정광호, 조만호, 도기훈, 고대홍, 손현철, 김민규
Applied Physics Letters, 2008

138

Change in band alignment of Hf O2 films with annealing treatments
임찬중, 고대홍, 장문형, 정권범, 조만호, 전형탁
Applied Physics Letters, 2008

139

Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films
정권범, 조만호, Hwang U., Kang H.J., 서동찬, 손현철, 고대홍, Kim S.H., 전형탁
Applied Physics Letters, 2008

140

Phase transformation behavior of N-doped Ge2 Sb2+x Te5 thin films (x=0, 0.2) for phase change memory
도기훈, 손현철, 고대홍
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007