발행물

전체 논문

248

111

Enhanced bipolar resistive switching of HfO2 with a Ti interlayer
이두성, 성용헌, 이인근, 김종기, 손현철, 고대홍
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011

112

Effects of Interface Al2O3 Passivation Layer for High-k HfO2 on GaAs
서동찬, 조영대, 고대홍, 이용식, 정권범, 조만호
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011

113

Understanding the epitaxial growth of SexTey@Te core-shell nanorods and the generation of periodic defects
문건대, 민유호, 고성욱, 김선욱, 고대홍, 정운룡
ACS Nano, 2010

114

Effect of Al doping on resistive switching behavior of NiOx films for nonvolatile memory application
김종기, 나희도, 오진호, 고대홍, 손현철
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010

115

Relaxation of misfit strain in silicon-germanium (Si1-xGe x) films during dry oxidation
유정호, 김선욱, 민병기, 손현철, 고대홍, 조만호
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010

116

Effect of Bonding Characteristics on the Instability of GexSb1-x Films
박승종, 장문형, 박성진, 조만호, Kim, JK (Kim, J. K.), 고대홍, 손현철
Journal of The Electrochemical Society, 2010

117

The Effects of Postannealing Treatment in Forming Gas on Low-k SiOC(H) Film
박상한, 김효진, 조만호, 고대홍, 손현철, Hahn, JH (Hahn, J. H.), Lee, DH (Lee, D. -H.), Kwon, YS (Kwon, Y. S.), Park, SY (Park, S. -Y.), Kim, MS (Kim, M. -S.)
Journal of The Electrochemical Society, 2010

118

TEM Study on Volume Changes and Void Formation in Ge2Sb2Te5 Films, with Repeated Phase Changes
도기훈, 이도규, 고대홍, 손현철, 조만호
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010

119

Enhancement of Thermal Stability in Ni Silicides on Epi-Si1-xCx by Pt Addition
유정호, 손현철, 고대홍, 조만호
Journal of The Electrochemical Society, 2010

120

Improved thermal stability of Al2O3 /HfO2/Al2O3 high-k gate dielectric stack on GaAs
서동찬, 조영대, 김선욱, 고대홍, 이용식, 조만호, 오정우
Applied Physics Letters, 2010