발행물

전체 논문

248

171

N-type dopant activation behaviors in poly Si1-xGex films with Ge contents and activation temperatures
강성관, 김재진, Kim, BG, 고대홍, Kang, HB, 양철웅
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003

172

Properties of polycrystalline Si1-xGex films grown by ultrahigh vacuum CVD using Si2H6 and GeH4
Lee, YH, 강성관, 김재진, 고대홍, Kang, HB, 양철웅, Ahn, TH, Yeo, IS, 이태완
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003

173

Effect of deposition conditions of poly Si1-xGex films and Ge atoms on the electrical properties of poly Si1-xGex (x=0,0.6)/HfO2 gate stack
Kang, SK, Nam, S, Min, BG, Nam, SW, 고대홍, 조만호
JOURNAL OF APPLIED PHYSICS, 2003

174

Interfacial Reaction in Poly Si1-xGex/ZrO2 with Ge Content in Poly Si1-xGex films
고대홍, 조만호
Electro Cemical and Solid State Letter, 2002

175

HIGH PERFORMANCE PMOSFET WITH BF3 PLASMA DOPEDGATE/SOURCE/DRAIN AND S/D EXTENSION
고대홍
IEDM, 2002

176

GATE OXIDE RELIABILITY IN MOS STRUCTURES WITH TI-POLYCIDE GATES
고대홍
KORIAN JOURNAL RADIOL, 2002

177

EFFECTS OF SURFACE IRON ON PHOTOCONDUCTIVITY CARRIER RECOMBINATION LIFETIME OF P-TYPE SILICON
고대홍
JOURNAL OF ELECTROCHEMICAL, 2002

178

CHARACTERISTICS OF PECVD GROWN TUNGSTEN NITRIDE FILMS AS DIFFUSION BARRIER LAYERS FOR ULSI DRAM APPL
고대홍
KORIAN JOURNAL RADIOL, 2002

179

Microstructure and mechanical properties of WC-C nanocomposite films
고대홍
DIAMOND AND RELATED MATERIALS, 2002

180

Dielectric Characteristrics of Al2O3-HfO2 nanolaminates on Si(100)
고대홍
APPLIED PHYSICS LETTERS, 2002