발행물

전체 논문

248

151

Suppression of phase separation in Hf-silicate films using NH3 annealing treatment
정권범, 황정남, 조만호, 임찬중, 고대홍
APPLIED PHYSICS LETTERS, 2006

152

A study on the formation processes and microstructures of Ni germanosilicide films on Si
도기훈, 이두성, 김지선, 김형섭, 고대홍
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006

153

Phase separation and electronic structure of Hf-silicate film as a function of composition
조만호, 정권범, 황정남, 이동원, 고대홍
APPLIED PHYSICS LETTERS, 2005

154

Characteristics of HfO2-Al2O3 laminate films containing incorporated N as a function of stack structure and annealing temperature
조만호, 정권범, 황정남, 고대홍, 김형섭
APPLIED PHYSICS LETTERS, 2005

155

Hf-aluminate films with and without an interfacial layer during growth and postannealing - Structural and electrical characteristics
정권범, Chang, HS, Lee, SH, 황정남, 고대홍, Kim, H, 문대원, 조만호
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2005

156

Effect of ZrO2 incorporation into high dielectric Gd2O3 film grown on Si(111)
Park, SA, Roh, YS, Kim, YK, Baeck, JH, Noh, M, Jeong, K, 조만호, 정광호, Joo, MK, Kim, TG, Song, JH, 고대홍
JOURNAL OF APPLIED PHYSICS, 2005

157

Thermal stability of Al- and Zr-doped HfO
Hong Y.-E., Kim Y.-S., Do K., Lee D., 고대홍, Ku J.-H., Kim H.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005

158

Formation of GdSi2 film on Si(111) via phase transformation assisted by interfacial SiO2 layer
Chung KB, Choi YK, Jang MH, Noh M, Whang CN, Jang HK, Jung EJ, 고대홍
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005

159

Interfacial reaction depending on the stack structure of Al2O3 and HfO2 during film growth and postannealing
조만호, 정권범, Chang, HS, 문대원, 박소아, 김영국, 정광호, 황정남, 이동원, 고대홍, Doh, SJ, Lee, JH, Lee, NI
APPLIED PHYSICS LETTERS, 2004

160

Interfacial characteristics of N-incorporated HfAlO high-k thin films
조만호, Moon D.W., Park S.A., Kim Y.K., 정광호, Kang S.K., 고대홍, Doh S.J., Lee J.H., Lee N.I.
APPLIED PHYSICS LETTERS, 2004