발행물
컨퍼런스
Atomic Layer Deposition (ALD) 2020
2001
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The effect of oxygen source on ferroelectricity of atomic layer deposited Hf0.5Zr0.5O2 thin film
A combinatorial approach to the ferroelectric properties in HfxZr1-xO2 deposited by atomic layer deposition
High wet etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition using 1,1,1-tris(dimethylamino)disilane
The Korean Conference on Semiconductors (KCS) 2020
2014
Ferroelectric Hf0.5Zr0.5O2 thin films
IEEE Semiconductor Interface Specialists Conference (SISC) 2019
Low-temperature PEALD SiNx on GaN MIS-HEMTs with crystalline interfacial layer