발행물
컨퍼런스
Atomic Layer Deposition (ALD) 2018, Incheon, Korea
2001
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Ozone based high temperature atomic layer deposition of SiO2 thin films
Ex-situ grown low-temperature SiNx on GaN with crystalline interfacial layer using hollow cathode PEALD
IEEE International Memory Workshop (IMW) 2018
2016
Ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors with low-voltage operation and high reliability for next-generation FRAM applications
The Minerals, Metals & Materials Society (TMS) 2018
2015
Study on the stress-induced ferroelectric polarization of hafnium zirconate thin films realized at low temperature
International Microprocesses and Nanotechnology Conference (MNC) 2017
2009
Scaling of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films for next-generation FRAM applications