발행물
컨퍼런스
US-Korea Conference on Science, Technology, and Entrepreneurship (UKC) 2018
2004
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Ferroelectric and dielectric properties of Hf0.5Zr0.5O2 films
Atomic Layer Deposition (ALD) 2018, Incheon, Korea
2001
Scaling ferroelectric Hf0.5Zr0.5O2 for back-end of line integration
In-situ half-cycle analysis of atomic layer deposited zinc oxide as channel layer in thin film transistor
Wafer-scale characterization of atomic layer deposited zinc oxide thin films using a temperature gradient combinatorial approach
Study of hollow cathode plasma enhanced atomic layer deposited silicon nitride: Relationship between film properties and wet etch rate