발행물
컨퍼런스
2006 한국전기전자재료학회춘계학술대회
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Si 웨이퍼 연마에 영향을 미치는 슬러리 특성 연구
PACRIM-CMP2005
MONITORING OF BREAK-IN TIME IN SI WAFER POLISHING
INFLUENCE OF PAD SURFACE STRUCTURE ON CMP PERFORMANCES IN SHALLOW TRENCH ISOLATION
CORRELATION BETWEEN PAD ROUGHNESS AND FRICTIONAL BEHAVIOR IN CHEMICAL MECHANICAL POLISHING
PAD ROUGHNESS VARIATION AND ITS EFFECT ON MATERIAL REMOVAL PROFILE OF CERIA BASED SLURRY DURING OXIDE CMP