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81
Experimental Investigation of Material Removal Characteristics in Silicon Chemical Mechanical Polishing
Park, B, Jeong, S, Lee, H, Kim, H, Jeong, H, Dornfeld, DA
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009
82
Mechanical effect of process condition and abrasive concentration on material removal rate profile in copper chemical mechanical planarization
Lee, H (Lee, Hyunseop), Park, B (Park, Boumyoung), Jeong, H (Jeong, Haedo)
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2009
83
Chemical and mechanical balance in polishing of electronic materials for defect-free surfaces
Lee, HS (Lee, H. S.), Jeong, HD (Jeong, H. D.)
CIRP ANNALS-MANUFACTURING TECHNOLOGY, 2009
84
The effect of PVA brush scrubbing on post CMP cleaning process for damascene Cu interconnection
Cho, H., Kim, Y., Lee, H., Joo, S., Jeong, H.
Diffusion and Defect Data Pt.B: Solid State Phenomena, 2009
85
Effect of Process Parameters on Friction Force and Material Removal in Oxide Chemical Mechanical Polishing
Park, B, Lee, H, Kim, Y, Kim, H, Jeong, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008
86
Chemical mechanical planarization method for thick copper films of micro-electro-mechanical systems and integrated circuits
Lee, H, Joo, S, Kim, H, Jeong, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008
87
Pad roughness variation and its effect on material removal profile in ceria-based CMP slurry
Park, B (Park, Boumyoung), Lee, H (Lee, Hyunseop), Park, K (Park, Kihyun), Kim, H (Kim, Hyoungjae), Jeong, H (Jeong, Haedo)
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2008
88
Influence of slurry components on uniformity in copper chemical mechanical planarization
Lee, H, Park, B, Jeong, H
MICROELECTRONIC ENGINEERING, 2008
89
The effect of mixed abrasive slurry on CMP of 6H-SiC substrate
Park, B., Lee, H., Jeong, S., Seo, H., Joo, S., Jeong, H., Kim, H.
Materials Science Forum, 2008
90
The characteristics of frictional behavior in CMP using an integrated monitoring system
Lee H.S., Park B.Y., Park S.M., Kim H.J., Jeong H.D.
Key Engineering Materials, 2007
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