2001

,

A STUDY ON THE GERMANOSILICIDE FORMATION IN THE NI/SI1-XGEX SYSTEM FOR CMOS DEVICES APPLICATIONS

2001

,

THE INTERFACIAL REACTION IN THE W/WNX/POLY SI1-XGEX WITH GE CONTENTS AND ANEALING PROCESS

2001

,

증착조건 및 열처리조건에 따른 HfO2 게이트 유전막의 특성

2001

,

N TYPE DOPANT ACTIVATION BEHAVIORS OF POLY SI1-XGEX WITH GE CONTENTS AND ACTIVATION TEMPERATURE

2001

,

CHARACTERIZATION OF CEO2 THIN FILMS DEPOSITED BY REACTIVE SPUTTERING PROCESS UPON O2 ANNEALING