발행물

전체 논문

66

11

Failure Analysis of Galaxy S7 Edge Smartphone Using Neutron Radiation
Geunyong Bak, Sanghyeon Baeg
Transactions on Nuclear,

12

Energy Straggling and an Experimental Investigation of Bragg's rule for 241Am alpha Particles in Air and its Constituents
Mirza Hussain Raza Qasim, Sanghyeon Baeg
Radiation Physics and Chemistry, 2020

13

Radiation Reliability Benefit of Area-Optimized Interleaved Flip-Flop Layout in 28 nm Technology
Sang Hoon Jeon, Chulseung Lim, Sanghyeon Baeg, ShiJie Wen, Habin Wang, Li Chen
Journal of Microelectronics Reliability, 2019

14

Correctable and uncorrectable errors using large scale DRAM DIMMs in replacement network servers
Sanghyeon Baeg, Mirza Qasim, Junhyeong Kwon, Tan Li, Nilay Gupta, Shi-Jie Wen, Satyadev Kolli
Journal of Microelectronics Reliability, 2019

15

Architectural Design Tradeoffs in SRAM-based TCAMs
Ali Ahmed, Kyungbae Park, Saqib Ali Khan, Naeem Maroof, Sanghyeon Baeg
IEICE Electronics Express,

16

Failure Signature Analysis of Power-Opens in DDR3 SDRAMs
Tan Li, Hosung Lee, Geunyong Bak, Sanghyeon Baeg
Journal of Microelectronics Reliability, 2018

17

A single event upset tolerant latch design
Haibin Wang, Xixi Dai, Yangsheng Wang, Jinshun Bi, Bo Li, Gang Guo, Li Chen, Sanghyeon Baeg
Journal of Microelectronics Reliability, 2018

18

Modeling and analysis of single-event transient sensitivity of a 65nm clock tree
Yuanqing Li, Li Chen, Issam Nofal, Mo Chen, Haibin Wang, Rui Liu, Qingyu Chen, Milos Krstic, Shuting Shi, Gang Guo, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong
Journal of Microelectronics Reliability, 2018

19

Signal Characteristic and Test Exploitation for Intermittent Nanometer-scale Cracks
Hosung Lee, Sanghyeon Baeg
Journal of Microelectronics Reliability, 2018

20

Study of Proton Radiation Effect to Row Hammer Fault in DDR4 SDRAMs
Chulseung Lim, Kyungbae Park, Geunyong Bak, Donghyuk Yun, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong
Journal of Microelectronics Reliability, 2018