A Quatro-Based 65 nm Flip-Flop Circuit for Soft-Error Resilience
Y.-Q. Li, H.-B. Wang, R. Liu, L. Chen, I. Nofal, S.-T. Shi, A.-L He, G. Guo, S. H. Baeg, S.-J. Wen, R. Wong, M. Chen, Q. Wu
IEEE Trans. Nucl. Sci., 2017
22
An Alternative Approach to Measure Alpha-Particle-Induced SEU Cross-Section for Flip-Chip Packaged SRAM Devices: High Energy Alpha Backside Irradiation
Saqib Ali Khan, Chulseung Lim, Geunyong Bak, Sanghyeon Baeg, Soonyoung Lee
Temporal and Frequency Characteristic Analysis of Margin-related Failures Caused by an Intermittent Nano-scale Fracture of the Solder Ball in a BGA Package Device
Hosung Lee, Sanghyeon Baeg, Nelson Hua, ShiJie Wen
Journal of Microelectronics Reliability, 2017
25
Active Precharge Hammering to Monitor Displacement Damage Using High-Energy Protons in 3x-nm SDRAM
Chulseung Lim, Kyungbae Park, Sanghyeon Baeg
IEEE trans on Nucl. Sci., 2017
26
Assessing Alpha-particle-induced SEU Sensitivity Using High Energy Irradiation
Saqib Ali Khan, Shi-Jie Wen, Sanghyeon Baeg
IEICE Electronics Express, 2016
27
Statistical Distributions of Row-Hammering Induced Failures in DDR3 Components
Kyungbae Park, Donghyuk Yun, Sanghyeon Baeg
Journal of Microelectronics Reliability, 2016
28
An Area Efficient Stacked Latch Design Tolerant to SEU in 28 nm FDSOI Technology
H.-B. Wang, L. Chen, R. Liu, Y.-Q. Li, J. S. Kauppila, B. L. Bhuva, K. Lilja, S.-J. Wen, R. Wong, R. Fung, Sanghyeon Baeg
IEEE Trans. Nucl. Sci., 2016
29
A 65 nm Temporally Hardened Flip-Flop Circuit
Y. Li, H.-B. Wang, R. Liu, L. Chen, I. Nofal, Q. Chen, A. He, G. Guo, Sanghyeon Baeg, S.-J. Wen, R. Wong, Q. Wu, M. Chen
IEEE Trans. Nucl. Sci., 2016
30
Evaluation of SEU Performance of 28-nm FDSOI Flip-flop Designs
H.-B. Wang, J. S. Kauppila, K. Lilja, M. Bounasser, L. Chen, M. Newton, Y.-Q. Li, R. Liu, B. Bhuva, S.-J. Wen, R. Wong, R. Fung, Sanghyeon Baeg, L. W. Massengill