발행물

전체 논문

66

41

Vertically Partitioned SRAM-based Ternary Content Addressable Memory
Zahid Ullah, Sanghyeon Baeg
International Journal of Engineering and Technology, 2012

42

Comparative Study of MC-50 and ANITA Neutron Beams by Using 55 nm SRAM
Sanghyeon Baeg, Soonyoung Lee, Geun Yong Bak, Hyunsoo Jeong, Sang Hoon Jeon
Journal of the Korean Physical Society, 2012

43

Hybrid Partitioned SRAM-based Ternary Content Addressable Memory
Zahid Ullah, Ilgon Kim, Sanghyeon Baeg
IEEE Trans. Circuits Syst. I, Reg. Papers, 2012

44

Characterizing the Capacitive Crosstalk in SRAM Cells Using Negative Bit-Line Voltage Stress
Jongsun Bae, Sanghyeon Baeg, Sungju Park
IEEE Trans. Instrum. Meas, 2012

45

Memory Reliability Model for Accumulated and Clustered Soft Errors
Soonyoung Lee, Sanghyeon Baeg, Pedro Reviriego
IEEE Trans. Nucl. Sci., 2011

46

Mitigating the effects of large Multiple Cell Upsets (MCUs) in Memories
Juan Antonio Maestro, Pedro Reviriego, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong
ACM Trans. on Design Auto. of Elec. Syst., 2011

47

Protection of Memories Suffering MCUs through the Selection of the Optimal Interleaving Distance
Pedro Reviriego Vasallo, Juan Antonio Maestro De la Cuerda, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong
IEEE Trans. Nucl. Sci., 2010

48

Optimizing Scrubbing Sequences for Advanced Computer Memories
Pedro Reviriego, Juan Antonio Maestro, Sanghyeon Baeg
IEEE Trans. Device Mater. Rel., 2010

49

Minimizing Soft Errors in TCAM Devices: A Probabilistic Approach to Determining Scrubbing Intervals
Sanghyeon Baeg, ShiJie Wen, Richard Wong
IEEE Trans. Circuits Syst. I, Reg. Papers, 2010

50

SRAM Interleaving Distance Selection with a Soft Error Failure Model
Sanghyeon Baeg, ShiJie Wen, Richard Wong
IEEE Trans. Nucl. Sci., 2009