The Hydrophilization of Process Wafersin dilute Hydrogen Peroxide Solutionsand Ozonated Deionized Water and ItsEffects on Defects and Gate OxideIntegrity
박진구, 0
Japanese Journal of AppliedPhysics, 1997
293
반도체 습식 HF 최종 공정중 실리콘 표면의소수성이 Water Mark 형성에 미치는 영향
박진구, 0, 0, 0
한국재료학회지, 1997
294
Ozone Injected DI Water in Semiconductor Wet Cleaning Process
10054377
J.of Engineering & Technology, 1997
295
The Effect of Hydrophobicity of Silicon Surface on the Formation of the Water Marks during the HF-Last Wet Chemical Processing
10054377
Korean J.of Material Research, 1997
296
Prepartion of Perfluorinated Organic Thin Film for the Prevention of Stiction
10054377
Material Research Society of Korea, 1997
297
The Study on Mechanism and Solubility of Ozone in Semiconductor Cleaning Solutions
10054377
Material Research Society of Korea, 1997
298
The Effect of the Wettability of Silicon Wafers and the Drying Atmosphere on the Formation of the Water Marks in Semiconductor Wet Chemical Processing
10054377
Surface Technology Society of Korea, 1996
299
The Behavior of Ozone in Deionized Water and its Cleaning Efficiency
10054377
Material Research Society of Korea, 1996
300
Scanning Tunneling Microscopy(STm)/Atonic Force Microscopy(AFm) studies of Siliccon surfaces Treated in Alkaline solutions of interest to semiconductro Processing